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首頁(yè) >G4BC30W>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
G4BC30W	文件：139.38 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign	IRF International Rectifier	IRF
G4BC30W	文件：275.6 Kbytes Page：9 Pages	INSULATED GATE BIPOLAR TRANSISTOR	IRF International Rectifier	IRF
G4BC30W	文件：287.76 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR	IRF International Rectifier	IRF
IRG4BC30	文件：412.64 Kbytes Page：10 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s	IRF International Rectifier	IRF
IRG4BC30	文件：137.95 Kbytes Page：8 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious	IRF International Rectifier	IRF
IRG4BC30	文件：167.27 Kbytes Page：8 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff	IRF International Rectifier	IRF
IRG4BC30F	文件：167.27 Kbytes Page：8 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff	IRF International Rectifier	IRF
IRG4BC30F	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF
IRG4BC30F	文件：177.75 Kbytes Page：9 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRF International Rectifier	IRF
IRG4BC30FD	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF
IRG4BC30FD	文件：412.64 Kbytes Page：10 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s	IRF International Rectifier	IRF
IRG4BC30FDPBF	文件：3.17753 Mbytes Page：11 Pages	FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A) FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan	IRF International Rectifier	IRF
IRG4BC30FDPBF	文件：397.06 Kbytes Page：10 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRF International Rectifier	IRF
IRG4BC30FD-S	文件：1.25649 Mbytes Page：11 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultral	IRF International Rectifier	IRF
IRG4BC30FD-SPBF	文件：1.17757 Mbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultra	IRF International Rectifier	IRF
IRG4BC30FD-SPBF	文件：1.21922 Mbytes Page：11 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE	IRF International Rectifier	IRF
IRG4BC30FPBF	文件：218.21 Kbytes Page：8 Pages	FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generatio	IRF International Rectifier	IRF
IRG4BC30FPBF	文件：311 Kbytes Page：8 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRF International Rectifier	IRF
IRG4BC30F-STRLP	文件：177.75 Kbytes Page：9 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRF International Rectifier	IRF
IRG4BC30K	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	G4BC30W	IR	24+	TO-220	10		詢價(jià)
瀚佳科技(深圳)有限公司	G4BC30W	IR	24+	TO-220	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)
深圳市賽美科科技有限公司	G4BC30W	IR		TO-220	50000	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
深圳市河鋒鑫科技有限公司	G4BC30W	IR	22+	TO-220	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳龐田科技有限公司	G4BC30W	IR	2023+環(huán)?，F(xiàn)貨	TO-220	10000	專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢價(jià)
深圳市安富世紀(jì)電子有限公司	G4BC30W	IR	23+	TO-220	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	G4BC30W	IR	23+	TO-220	7000		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	G4BC30W-S	IR	2018+	TO263	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	G4BC30W-S	KEC	23+	TO-220F	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	G4BC30WPBF	IR/INFINEON	23+	TO-220	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多G4BC30W供應(yīng)商更新時(shí)間2025-1-15 16:30:00

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