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IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30FD

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRF

International Rectifier

IRG4BC30FD1PBF

Fast CoPack IGBT

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHyperfastFREDdiodesforultralo

IRF

International Rectifier

IRG4BC30FDPBF

Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRF

International Rectifier

IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultral

IRF

International Rectifier

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultra

IRF

International Rectifier

IRG4BC30FD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRF

International Rectifier

IRG4BC30FD1PBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRF

International Rectifier

IRG4BC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4BC30FD

  • 制造商：

    International Rectifier

  • 功能描述：

    IGBT TO-220

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO 220
161546
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
24+
TO-220
3165
詢價
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價
IR
24+
原廠封裝
400
原裝現(xiàn)貨假一罰十
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220
3500
專做原裝正品,假一罰百!
 詢價
IR
1950+
TO-220
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
IR
20+
TO-220
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多IRG4BC30FD供應商 更新時間2025-1-26 11:30:00

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