首頁 >IRG4BC30UDPBF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4BC30UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | IRF | |
IRG4BC30UDPBF | ULTRA FAST COPACK IGBT | IRF International Rectifier | IRF | |
IRG4BC30UDPBF | Package:TO-220-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 23A 100W TO220AB | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
ULTRA FAST COPACK IGBT | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
UltraFastSpeedIGBT Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Bene | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage ?Lead-Free Benefit | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A) Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號:
IRG4BC30UDPBF
- 制造商:
Infineon Technologies
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.1V @ 15V,12A
- 開關(guān)能量:
380μJ(開),160μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
40ns/91ns
- 測試條件:
480V,12A,23 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220AB
- 描述:
IGBT 600V 23A 100W TO220AB
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/IR |
1907+ |
NA |
950 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
50000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
INFINEON/英飛凌 |
23+/24+ |
TO-220 |
9865 |
專營品牌.原裝正品.終端BOM表可配單 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
23+ |
TO-220AB |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
24+ |
原廠封裝 |
2220 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
1708+ |
TO-220 |
5600 |
只做原裝進(jìn)口,假一罰十 |
詢價 | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 |
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