首頁(yè) >IRG4PC50FPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4PC50FPBF | Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR FastSpeedIGBT INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | |
IRG4PC50FPBF | IGBT DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IRG4PC50FPBF | INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | |
IRG4PC50FPBF | 包裝:卷帶(TR) 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 70A 200W TO247AC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerat | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features ●ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ●Generation4IGBTdesignprovidestigh | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?ShortCircuitRatedUltraFast:Optimizedforhigh operationfrequencies>5.0kHz,andShortCircuitRated to10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A) VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE StandarddSpeedCoPackIGBT | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan | IRF International Rectifier | IRF | ||
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IRG4PC50FPBF
- 制造商:
Infineon Technologies
- 類(lèi)別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
卷帶(TR)
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
1.6V @ 15V,39A
- 開(kāi)關(guān)能量:
370μJ(開(kāi)),2.1mJ(關(guān))
- 輸入類(lèi)型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
31ns/240ns
- 測(cè)試條件:
480V,39A,5 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類(lèi)型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247AC
- 描述:
IGBT 600V 70A 200W TO247AC
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/IR |
18+ |
TO-247-3 |
150 |
詢(xún)價(jià) | |||
INFINEON/IR |
1907+ |
NA |
1200 |
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨 |
詢(xún)價(jià) | ||
INFINEON/IR |
18+ |
150 |
TO-247-3 |
詢(xún)價(jià) | |||
英飛凌 |
新批次 |
N/A |
1500 |
詢(xún)價(jià) | |||
INFINEON/英飛凌 |
19+ |
TO-247 |
149 |
正規(guī)渠道原裝正品 |
詢(xún)價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
IR |
24+ |
TO-247-3 |
179 |
詢(xún)價(jià) | |||
IR |
16+ |
原廠封裝 |
775 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
Infineon |
18+ |
NA |
3466 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢(xún)價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) |
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