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IRG4PC50FPBF

Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

FastSpeedIGBT INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50FPBF

IGBT

DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRG4PC50FPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC50FPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 70A 200W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PC50FPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC50K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerat

IRF

International Rectifier

IRG4PC50KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features ●ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ●Generation4IGBTdesignprovidestigh

IRF

International Rectifier

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?ShortCircuitRatedUltraFast:Optimizedforhigh operationfrequencies>5.0kHz,andShortCircuitRated to10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRE

IRF

International Rectifier

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50KPBF

ShortCircuitRatedUltraFastIGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRF

International Rectifier

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC50S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRF

International Rectifier

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRF

International Rectifier

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC50U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

IRF

International Rectifier

IRG4PC50UD

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IRG4PC50FPBF

  • 制造商:

    Infineon Technologies

  • 類(lèi)別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    1.6V @ 15V,39A

  • 開(kāi)關(guān)能量:

    370μJ(開(kāi)),2.1mJ(關(guān))

  • 輸入類(lèi)型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開(kāi)/關(guān))值:

    31ns/240ns

  • 測(cè)試條件:

    480V,39A,5 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類(lèi)型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AC

  • 描述:

    IGBT 600V 70A 200W TO247AC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/IR
18+
TO-247-3
150
詢(xún)價(jià)
INFINEON/IR
1907+
NA
1200
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
詢(xún)價(jià)
INFINEON/IR
18+
150
TO-247-3
詢(xún)價(jià)
英飛凌
新批次
N/A
1500
詢(xún)價(jià)
INFINEON/英飛凌
19+
TO-247
149
正規(guī)渠道原裝正品
詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢(xún)價(jià)
IR
24+
TO-247-3
179
詢(xún)價(jià)
IR
16+
原廠封裝
775
原裝現(xiàn)貨假一罰十
詢(xún)價(jià)
Infineon
18+
NA
3466
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
更多IRG4PC50FPBF供應(yīng)商 更新時(shí)間2024-11-1 14:02:00