首頁 >IRG4PH40UDPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4PH40UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult | IRF International Rectifier | IRF | |
IRG4PH40UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRF International Rectifier | IRF | |
IRG4PH40UDPBF | 包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 41A 160W TO247AC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRF International Rectifier | IRF | ||
SINGLE-PHASEFULLWAVEBRIDGE4AMPERESFORP.C.BOARDANDHEATSINKMOUNTING | edi Electronic devices inc. | edi | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=2.74V,@Vge=15V,Ic=15A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.47V,@Vge=15V,Ic=15A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE | IRF International Rectifier | IRF | ||
INSUALATEDGATEBIPOLARTRANSISTORWITHYLTRAFASTSOFTRECOVERYDIODE Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=2.43V,@Vge=15V,Ic=21A) Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?Optimizedforpowerconversion;SMPS,UPS and | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.43V,@Vge=15V,Ic=21A) Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
UltraFastSpeedIGBT Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?Optimizedforpowerconversion;SMPS,UPS and | IRF International Rectifier | IRF |
產品屬性
- 產品編號:
IRG4PH40UDPBF
- 制造商:
Infineon Technologies
- 類別:
分立半導體產品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
卷帶(TR)
- 不同?Vge、Ic 時?Vce(on)(最大值):
3.1V @ 15V,21A
- 開關能量:
1.8mJ(開),1.93mJ(關)
- 輸入類型:
標準
- 25°C 時 Td(開/關)值:
46ns/97ns
- 測試條件:
800V,21A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應商器件封裝:
TO-247AC
- 描述:
IGBT 1200V 41A 160W TO247AC
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
20540 |
保證進口原裝現貨假一賠十 |
詢價 | ||
IR |
2020+ |
TO-247 |
9600 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
19+ |
TO-3P |
18000 |
詢價 | |||
INFINEON/IR |
1907+ |
NA |
700 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-247 |
4524 |
原廠直供,支持賬期,免費供樣,技術支持 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-247 |
3 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-247 |
4800 |
專營INFINEON/英飛凌全新原裝進口正品 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-247 |
15316 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現貨價秒殺全網 |
詢價 | ||
IR |
2015+ |
TO-247 |
19889 |
一級代理原裝現貨,特價熱賣! |
詢價 |
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