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IRG4PC50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesigna

IRF

International Rectifier

IRG4PC50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC50WPBF

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 55A 200W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PC50WPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

G4PC50F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features ?Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystandard

IRF

International Rectifier

G4PC50FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packa

IRF

International Rectifier

G4PC50U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

IRF

International Rectifier

G4PC50UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack

IRF

International Rectifier

G4PC50W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

IRG4PC50F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features ?Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystandard

IRF

International Rectifier

IRG4PC50FD

N-ChannelIGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.6V@IC=39A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRG4PC50FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packa

IRF

International Rectifier

IRG4PC50FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50FD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50F-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50F-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-247ADpackage ?Lead-Free Benefits ?

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IRG4PC50WPBF

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.3V @ 15V，27A

  • 開關(guān)能量：

    80μJ（開），320μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    46ns/120ns

  • 測試條件：

    480V，27A，5 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247AC

  • 描述：

    IGBT 600V 55A 200W TO247AC

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
13+
TO-247
10000
深圳市勤思達(dá)科技有限公司主營IR全系列原裝正品,公司現(xiàn)貨供應(yīng)IRG4PC50WPBF,歡迎咨詢洽談。
 詢價
IR/INFINEON
20+
TO-247
2500
IGBT 600V 55A 200W 通孔 TO-247AC
 詢價
IR
23+
TO-247
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-247
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
Infineon(英飛凌)
23+
TO-247
924
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
IR
23+
TO-247
65400
詢價
INFINEON/英飛凌
21+
TO-247
36800
進(jìn)口原裝現(xiàn)貨 假一賠十
 詢價
INFINEON/英飛凌
20+
TO-247
2500
進(jìn)口原裝支持含稅
 詢價
IR
22+
TO-247
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
INFINEON/英飛凌
22+
TO-247
4800
專營INFINEON/英飛凌全新原裝進(jìn)口正品
 詢價
更多IRG4PC50WPBF供應(yīng)商 更新時間2025-1-11 11:03:00

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