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IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PC40UDPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 40A 160W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PC40UDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

IRF

International Rectifier

G4PC40U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A)

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRF

International Rectifier

G4PC40W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC40F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC40F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC40FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IRG4PC40UDPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.1V @ 15V,20A

  • 開關(guān)能量:

    710μJ(開),350μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    54ns/110ns

  • 測試條件:

    480V,20A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AC

  • 描述:

    IGBT 600V 40A 160W TO247AC

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
TO-247
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
詢價(jià)
IR
2020+
TO-247
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
IR
2020+
TO-247
22000
全新原裝正品 現(xiàn)貨庫存 價(jià)格優(yōu)勢
詢價(jià)
INFINEON/IR
1907+
NA
4325
20年老字號,原裝優(yōu)勢長期供貨
詢價(jià)
IR
24+
N/A
1000
全新原裝的現(xiàn)貨
詢價(jià)
IR
16+
TO-247
6297
全新原裝/深圳現(xiàn)貨庫2
詢價(jià)
IR
23+
TO-247
65400
詢價(jià)
INFINEON/英飛凌
24+
TO-247
63
只做原廠渠道 可追溯貨源
詢價(jià)
IR
22+
TO-247
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
INFINEON/英飛凌
2021+
TO-247
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
詢價(jià)
更多IRG4PC40UDPBF供應(yīng)商 更新時(shí)間2024-12-23 18:14:00