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GA200

SCRs Nanosecond Switching, Planar

DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GA200

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

DIGITRON

Digitron Semiconductors

GA200A

SCRs Nanosecond Switching, Planar

DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GA200HS60S

HALF-BRIDGE IGBT INT-A-PAK

Features ?Generation4IGBTTechnology ?Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz ?VeryLowConductionLosses ?Industrystandardpackage Benefits ?Increasedoperatingefficiency ?Directmountingtoheatsink ?Performanceoptimi

IRF

International Rectifier

GA200HS60S1

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features ?Generation4IGBTTechnology ?Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz ?VeryLowConductionLosses ?Industrystandardpackage Benefits ?Increasedoperatingefficiency ?Directmountingtoheatsink ?Performanceoptimi

IRF

International Rectifier

GA200HS60S1PBF

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES ?Generation4IGBTtechnology ?Standard:OptimizedforhardswitchingspeedDCto1kHz ?Verylowconductionlosses ?Industrystandardpackage ?ULapprovedfileE78996 ?ComplianttoRoHSdirective2002/95/EC ?Designedandqualifiedforindustriallevel BENEFITS ?Increased

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200NS61U

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?HEXFRED?antiparalleldiodeswithultra-softrecovery ?Industrystandardpackage ?ULapproved ?Generation4IGBTtechnology B

IRF

International Rectifier

GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60S

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    GA200

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    THYRISTOR SCR 60V 3PIN TO-18 - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MMC
22+
DIP10
5000
進(jìn)口原裝!現(xiàn)貨庫(kù)存
 詢價(jià)
mmc
2023+環(huán)?，F(xiàn)貨
原廠原裝
1200
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
IR
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
模塊
3562
詢價(jià)
IR
24+
模塊
200
單開(kāi)關(guān)型
 詢價(jià)
INFINEON
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
INTERNATIONA
05+
原廠原裝
4220
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
VishaySemiconductorDiode
23+
IGBTSTD600V100ASOT227
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IR
24+
模塊
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
IR
23+
200A600V
900
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
更多GA200供應(yīng)商 更新時(shí)間2025-4-12 10:16:00

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