首頁 >GAL22V10D-15LJIC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
LATTICE/萊迪斯 |
PLCC28 |
貨真價(jià)實(shí),假一罰十 |
25000 |
詢價(jià) | |||
LATTICE/萊迪斯 |
21+ |
PLCC |
5000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn) |
詢價(jià) | ||
Lattice Semiconductor Corporat |
22+ |
28PLCC (11.51x11.51) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Lattice Semiconductor Corporat |
21+ |
28PLCC (11.51x11.51) |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
LATTICE |
12+ |
PLCC |
8603 |
一定是全新原裝正品只有原裝LATTICE現(xiàn)貨 |
詢價(jià) | ||
LATTICE |
10+ |
PLCC28 |
50 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢量大可以發(fā)貨 |
詢價(jià) | ||
LATTICE |
14 |
原裝正品長期供貨,如假包賠包換 徐小姐13714450367 |
詢價(jià) | ||||
Lattice |
17+ |
PLCC |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
Lattice |
23+ |
PLCC |
9980 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
Lattice |
Lattice |
9856 |
只做原裝貨值得信賴 |
詢價(jià) |
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