| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
GAL22V10D | GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | |
High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice |
詳細(xì)參數(shù)
- 型號(hào)：
GAL22V10D
- 功能描述：
Electrically-Erasable PLD
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Lattice(萊迪斯) |
23+ |
標(biāo)準(zhǔn)封裝 |
11848 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。 |
詢價(jià) | ||
Lattice(萊迪斯) |
23+ |
特價(jià) |
6000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Lattice |
24+ |
PLCC28 |
2250 |
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時(shí)可發(fā)貨 |
詢價(jià) | ||
進(jìn)口原裝 |
23+ |
PLCC |
1005 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
LATTICE |
22+ |
PLCC |
2000 |
進(jìn)口原裝!現(xiàn)貨庫存 |
詢價(jià) | ||
LATTICE |
新 |
2 |
全新原裝 貨期兩周 |
詢價(jià) | |||
LATTICE |
18+ |
DIP24 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
DIP-24 |
1948+ |
LAT |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
LAT |
23+ |
65480 |
詢價(jià) | ||||
20+ |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) |
相關(guān)規(guī)格書
更多- GAL22V10D-25LPI
- GALI-21
- GALILEO1.Y936726
- GALILEO2934953
- GANFETBOOKSIMPLIFIEDCHINESEVERSION
- GAP103
- GAP3SLT33-214
- GAP-CAB
- GASSENSOREVM
- GATELEAD-28129
- GAX-2-66
- GAX-4-66-50
- GAX-6-66-50
- GB01SLT12-220
- GB02SHT03-46
- GB02SLT12-220
- GB0502PFV1-8.B2393.GN
- GB05SLT12-252
- GB1074U-3-0
- GB10SLT12-252
- GB1205PHVX-8AY.GN
- GB1206PHV1-AY.GN
- GB15AH
- GB15AH-XB
- GB15AP
- GB15AP-XC
- GB15AV-XA
- GB15AV-XC
- GB15JHF
- GB15JPD
- GB15JVC
- GB-1X-120A
- GB215A2H
- GB215AB
- GB215AH-A
- GB215AH-C
- GB215AP-A
- GB25AH
- GB25AP-XC
- GB25AV-XA
- GB-2C-110D
- GB2CB10
- GB50SLT12-247
- GB60S15K
- GB60S48K
相關(guān)庫存
更多- GAL26CV12C-7LJ
- GALILEO1.Y
- GALILEO2.P
- GAM0404
- GAP05SLT80-220
- GAP1605
- GAP3SLT33-220FP
- GASKET
- GASSN-GM-393
- GAX-2-64
- GAX-2-88-50
- GAX-4-88
- GAX-8-62
- GB02SHT01-46
- GB02SHT06-46
- GB02SLT12-252
- GB05SLT12-220
- GB100XCP12-227
- GB10SLT12-220
- GB1205PHV2-8AY.GN
- GB1205PKV1-8AY.GN
- GB1525
- GB15AH-XA
- GB15AH-XC
- GB15AP-XA
- GB15AV
- GB15AV-XB
- GB15JHC
- GB15JPC
- GB15JPF
- GB15JVF
- GB-1X-12D
- GB215A2H-BB
- GB215AH
- GB215AH-A-RO
- GB215AP
- GB215AP-C
- GB25AP
- GB25AV
- GB25AV-XC
- GB2CB05
- GB2CB16
- GB60S12K
- GB60S24K
- GB-8200
