首頁 >GD25Q21CUIGR>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
GD25Q21CUIGR | Uniform Sector Dual and Quad Serial Flash 1.FEATURES ◆2M-bitSerialFlash -256K-byte -256bytesperprogrammablepage ◆Standard,Dual,QuadSPI -StandardSPI:SCLK,CS#,SI,SO,WP#,HOLD# -DualSPI:SCLK,CS#,IO0,IO1,WP#,HOLD# -QuadSPI:SCLK,CS#,IO0,IO1,IO2,IO3 ◆HighSpeedClockFrequency -104MHzforfastreadwith3 | GigaDeviceGigaDevice Semiconductor (Beijing) Inc. 兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司 | GigaDevice | |
UniformSectorDualandQuadSerialFlash 1.FEATURES ◆2M-bitSerialFlash -256K-byte -256bytesperprogrammablepage ◆Standard,Dual,QuadSPI -StandardSPI:SCLK,CS#,SI,SO,WP#,HOLD# -DualSPI:SCLK,CS#,IO0,IO1,WP#,HOLD# -QuadSPI:SCLK,CS#,IO0,IO1,IO2,IO3 ◆HighSpeedClockFrequency -104MHzforfastreadwith3 | GigaDeviceGigaDevice Semiconductor (Beijing) Inc. 兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司 | GigaDevice | ||
UniformSectorDualandQuadSerialFlash 1.FEATURES ◆2M-bitSerialFlash -256K-byte -256bytesperprogrammablepage ◆Standard,Dual,QuadSPI -StandardSPI:SCLK,CS#,SI,SO,WP#,HOLD# -DualSPI:SCLK,CS#,IO0,IO1,WP#,HOLD# -QuadSPI:SCLK,CS#,IO0,IO1,IO2,IO3 ◆HighSpeedClockFrequency -104MHzforfastreadwith3 | GigaDeviceGigaDevice Semiconductor (Beijing) Inc. 兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司 | GigaDevice | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
GD |
TFBGA24 |
36800 |
提供BOM表配單只做原裝貨值得信賴 |
詢價 | |||
GD |
24+ |
SOP-8/SOP16 |
90000 |
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理 |
詢價 | ||
GD |
2016+ |
SOP8 |
10000 |
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號! |
詢價 | ||
GD |
2018+ |
SOP |
6528 |
承若只做進(jìn)口原裝正品假一賠十! |
詢價 | ||
GD |
24+ |
SOP-16 |
90000 |
專營GigaDevice原裝正品可售樣品 |
詢價 | ||
GD兆易 |
22+23+ |
SOP-8 |
20578 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
GIGADEVICE |
20+ |
SOP16 |
19570 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
GD |
2020+ |
SOP16 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
GD/兆易創(chuàng)新 |
24+ |
SOP-16 |
95000 |
原裝現(xiàn)貨 |
詢價 | ||
GD |
21+ |
SOP16 |
443 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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