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GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheGE60L02providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. Thethrough-holeversion(TO-220)isavailableforlow-profileapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverte

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

60L02GJ

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

60L02H

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

60L02J

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

60L02S

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

AP60L02GJ

LowGateChargeSimpleDriveRequirement

Description TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP60L02GJ)isavailableforlow-profileapplications. ▼LowGateCharge ▼SimpleDriv

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP60L02GP

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP60L02GS

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP60L02P

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedfo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

詳細參數(shù)

  • 型號：

    GE60L02

  • 制造商：

    GTM

  • 制造商全稱：

    GTM

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
GTM
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
PHI
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
GE
專業(yè)鐵帽
TO-3
600
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
GE
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
GEI
24+
DIP
233
詢價
GEI
22+
DIP
5000
進口原裝!現(xiàn)貨庫存
 詢價
G.POWER
24+
原廠封裝
274
原裝現(xiàn)貨假一罰十
 詢價
N/A
23+
DIP
9000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
23+
DIP8
3880
正品原裝貨價格低
 詢價
IR
22+
DIP4
6000
終端可免費供樣,支持BOM配單
 詢價
更多GE60L02供應(yīng)商 更新時間2025-1-24 17:09:00

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