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NE71300

LOWNOISELTOK-BANDGaAsMESFET

CEL

California Eastern Labs

NE71300

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300L

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

LtoKuBANDLOWNOISEAMPLIFIERN-CHANNELGaAsMESFET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300M

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-M

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300-M

LtoKuBANDLOWNOISEAMPLIFIERN-CHANNELGaAsMESFET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300N

LOWNOISELTOK-BANDGaAsMESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-N

GaAsMESFET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
JIEFUMICRO
23+
4WLCSP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
JIEFUMRO
23+
NA/
9049
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
24+
N/A
47000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
JIEFU
23+
4WLCSP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
GLF(杰夫微)
23+
WLCSP-4(0.8x0.8)
290
10年專業(yè)做電源IC/原裝現(xiàn)貨庫(kù)存
 詢價(jià)
GLF
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
GLF
3000
原裝正品老板王磊+13925678267
 詢價(jià)
GLF
24+
ROHS
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
GLF Integrate
23+
QFN
6000
只有原裝
 詢價(jià)
GLF(杰夫微)
23+
WLCSP
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
更多GLF71300供應(yīng)商 更新時(shí)間2025-1-31 11:00:00

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