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SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-PHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

詳細(xì)參數(shù)

  • 型號:

    GLS29EE512-70-4I-EHE

  • 功能描述:

    電可擦除可編程只讀存儲(chǔ)器 512Kb Pge-Wrt 電可擦除可編程只讀存儲(chǔ)器 64K x 8, 128B Sector

  • RoHS:

  • 制造商:

    Atmel

  • 存儲(chǔ)容量:

    2 Kbit

  • 組織:

    256 B x 8

  • 數(shù)據(jù)保留:

    100 yr

  • 最大時(shí)鐘頻率:

    1000 KHz

  • 最大工作電流:

    6 uA

  • 工作電源電壓:

    1.7 V to 5.5 V

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-8

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
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1421+
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2166
假一賠萬只做原裝現(xiàn)貨實(shí)單可談
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11+
156
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三年內(nèi)
1983
只做原裝正品
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2021+
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100500
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21+
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2166
原裝現(xiàn)貨假一賠十
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Greenliant
2021++
只做原裝
5850
進(jìn)口原裝假一賠百,現(xiàn)貨熱賣
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2022+
5000
只做原裝,價(jià)格優(yōu)惠,長期供貨。
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23+
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3200
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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1421+
TSOP
1990
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
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23+
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3500
十七年VIP會(huì)員,誠信經(jīng)營,一手貨源,原裝正品可零售!
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更多GLS29EE512-70-4I-EHE供應(yīng)商 更新時(shí)間2025-1-10 15:48:00