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IIRF9540N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9540

P-CHANNELPOWERMOSFETS

Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran

HARRIS

Harris Corporation

IRF9540

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9540

19A,100V,0.200Ohm,P-ChannelPowerMOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF9540

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9540

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9540

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9540

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9540

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF9540

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES ·DrainCurrent–ID=-19A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF9540

P-ChannelMOSFET

Description: ThisP-ChannelMOSFETusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications Features: 1)VDS=-100V,ID=-20A,RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF9540N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9540N

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540N

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540NL

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540NL

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9540NLPBF

HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A)

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
LEADTEK
22+
DIP
21000
原廠原包裝。假一罰十??砷_13%增值稅發(fā)票。
詢價
LEADTEK
2016+
DIP
4558
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價
LEADTEK
22+23+
DIP
21001
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價
LEADTEK
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
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LEADTEK
2022
DIP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
LEADTEK
23+
NA/
3284
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
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NIPO
21+
DNA
1300
公司現(xiàn)貨,有掛就有貨。
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RF
20+
射頻元件
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
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ZF Friedrichshafen AG
23+
6000
誠信服務(wù),絕對原裝原盤
詢價
24+
N/A
79000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
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更多GPS9540G供應(yīng)商 更新時間2024-12-24 11:00:00