首頁 >IRF9540>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF9540

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9540

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF9540

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9540

P-CHANNEL POWER MOSFETS

Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran

HARRIS

Harris Corporation

IRF9540

TO-220-3L Plas ti c-E n c a p s u late MOSFETS

FEATURES ·DrainCurrent–ID=-19A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF9540

P-Channel MOSFET

Description： ThisP-ChannelMOSFETusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications Features： 1)VDS=-100V,ID=-20A,RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF9540

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9540

Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF9540

  • 功能描述：

    MOSFET -100V Single P-Channel HEXFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
2015+
500
公司現(xiàn)貨庫存
 詢價
IR
23+
362
只做原裝全系列供應(yīng)價格優(yōu)勢
 詢價
FAIRCHILD
23+
TO-220
65400
詢價
FSC
2020+
TO-220
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
IR(國際整流器)
2023+
N/A
4550
全新原裝正品
 詢價
IR
24+
TO 220
161405
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
Slkor/薩科微
24+
TO-220
50000
Slkor/薩科微一級代理,價格優(yōu)勢
 詢價
IR
23+
現(xiàn)貨
5500
現(xiàn)貨,全新原裝
 詢價
IR
06+
TO-220
6000
全新原裝 絕對有貨
 詢價
更多IRF9540供應(yīng)商 更新時間2025-3-11 16:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多