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GRM188R60J475KE19D

800mA 1.5MHz Synchronous Step-Down Converter

GENERALDESCRIPTION TheSP6669isasynchronouscurrentmodePWMstepdown(buck)convertercapableofdeliveringupto800mAofcurrentandoptimizedforportablebattery-operatedapplications. Basedonacurrent-mode1.5MHzconstantfrequencyPWMcontrolscheme,theSP6669reducestheoverall

ETCList of Unclassifed Manufacturers

未分類制造商

GRM188R60J475KE19D

600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch

GeneralDescription TheAAT1171SwitchReg?dynamicallycontrolstheoperatingvoltageofaWCDMAorCDMApoweramplifierinsidesingle-cell,lithium-ionbattery-poweredsystems.TheAAT1171outputsavoltagebetween0.6Vand3.6V,therebyoptimizingtheamplifierefficiencyatbothlowandhight

SKYWORKSSkyworks Solutions Inc.

思佳訊美國思佳訊公司

GRM188R60J475KE19D

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA25312BisahighefficiencyInGaPHBTamplifierdesignedforusein2400MHzISMapplications,WLAN(802.11g),WiMAX(802.16e)andwirelessbroadbandmeshnetworks.Itissuitableforapplications

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

GRM188R60J475KE19D

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA25312Bisa2-stagehighefficiencyInGaPHBTdriveramplifierdesignedforusein2400MHzISMapplications,WLAN(802.11g),WiMAX(802.16e)andwirelessbroadbandmeshnetworks.Itissuitablef

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

GRM188R60J475KE19D

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMZ25332Bisa2--stage,highlinearityInGaPHBTbroadbandamplifierdesignedforfemtocell,picocell,WLAN(802.11g/n),W--CDMA,TD--SCDMAandLTEwirelessbroadbandapplications.Itprovidesexcep

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

GRM188R60J475KE19D

CHIP MONOLITHIC CERAMIC CAPACITOR

GRMseries/Hi-Cap(1uFandover) Features 1.TAchipcapacitorreplacementproductlineupisavailableinX7R(X7S,X7T,X7U),X6S(X6T)andX5Rtemperaturecharacteristicswithacapacitanceof1uFandlarger. 2.Thelineofhighvolumetriccapacitanceceramicchipcapacitorsisavailablein

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

GRM188R60J475KE19D

4MHz, 2A, 100 Duty Cycle Buck Regulator with HyperLight Load? and Power Good

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

GRM188R60J475KE19D

2.7V - 13V Input, 1A, Step-Up Power Supply

MPSMonolithic Power Systems Inc.

美國芯源美國芯源系統(tǒng)有限公司

GRM188R60J475KE19

InGaPHBTLinearAmplifier

1Generaldescription TheMMZ25333Bisaversatile3?stagepoweramplifiertargetedatdriverandpre?driverapplicationsformacroandmicrobase stationsandfinal?stageapplicationsforsmallcells.Itsversatiledesignallowsoperationinanyfrequencybandfrom1500to 2700MHzprovidingg

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

GRM188R60J475KE19

AirfastPre--driverModule

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    GRM188R60J475KE19D

  • 功能描述：

    多層陶瓷電容器MLCC - SMD/SMT 0603 4.7uF 6.3volts X5R 10%

  • RoHS：

    否

  • 制造商：

    American Technical Ceramics(ATC)

  • 電容：

    10 pF

  • 容差：

    1 %

  • 電壓額定值：

    250 V

  • 溫度系數(shù)/代碼：

    C0G(NP0) 外殼代碼 -

  • in：

    0505 外殼代碼 -

  • mm：

    1414

  • 工作溫度范圍：

    - 55 C to + 125 C

  • 產(chǎn)品：

    Low ESR MLCCs

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MURATA/村田
23+
0603
126100
原裝/支持-工廠-含稅-拆樣
 詢價(jià)
MURATA/村田
2019+
SMD
900000
原廠渠道 可含稅出貨
 詢價(jià)
MURATA(村田)
2021/2022+
標(biāo)準(zhǔn)封裝
20000
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢終端BOM表可配單提供樣品
 詢價(jià)
MURATA
2021+
SMD
6800
原廠原裝,歡迎咨詢
 詢價(jià)
Murata Manufacturing Co., Ltd.
11+
NA
32000
自營現(xiàn)貨,只做正品
 詢價(jià)
MURATA/村田
23+
SMD
42387
村田全系列可訂貨,免費(fèi)送樣,賬期支持!
 詢價(jià)
MURATA/村田
24+
SMD
30000
英博爾一站式，村田全系列可訂貨渠道商。
 詢價(jià)
MURATA(村田)
23+
0603
91519
村田全系列可訂貨,免費(fèi)送樣,賬期支持!
 詢價(jià)
MURATA
14+
32000
只做正品,現(xiàn)貨隨時(shí)出
 詢價(jià)
muRata
17+
SMD
100000
原裝正品現(xiàn)貨
 詢價(jià)
更多GRM188R60J475KE19D供應(yīng)商 更新時(shí)間2025-2-21 14:00:00

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