GS-065-060-5-B-A中文資料GAN數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? AEC-Q101 and AutoQual+? (Enhanced-AEC-Q101)

? 650 V enhancement mode power transistor

? Bottom-cooled, low inductance GaNPX? package

? RDS(on) = 25 mΩ

? IDS(max) = 60 A

? Ultra-low FOM

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 / +10 V)

? Very high switching frequency (> 10 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Small 11 x 9 mm2 PCB footprint

? Dual gate pads for optimal board layout

? RoHS 3 (6+4) compliant

Applications

? On Board Chargers

? Traction Drive

? DC-DC Converters

? Industrial Motor Drives

? Solar Inverters

? Bridgeless Totem Pole PFC

Description

The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology? and GaNPX? packaging. Island Technology? cell layout realizes high-current die and high yield. GaNPX? packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.