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GS816218BGB-250IV中文資料GSI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠(chǎng)商型號(hào) |
GS816218BGB-250IV |
| 功能描述 | 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| 文件大小 |
1.20405 Mbytes |
| 頁(yè)面數(shù)量 |
31 頁(yè) |
| 生產(chǎn)廠(chǎng)商 | GSI Technology |
| 企業(yè)簡(jiǎn)稱(chēng) |
GSI |
| 中文名稱(chēng) | GSI Technology官網(wǎng) |
| 原廠(chǎng)標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-23 8:24:00 |
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Functional Description
Applications
The GS8162xxBB-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
? FT pin for user-configurable flow through or pipeline operation
? Single/Dual Cycle Deselect selectable
? IEEE 1149.1 JTAG-compatible Boundary Scan
? ZQ mode pin for user-selectable high/low output drive
? 1.8 V or 2.5 V +10/–10 core power supply
? LBO pin for Linear or Interleaved Burst mode
? Internal input resistors on mode pins allow floating mode pins
? Default to SCD x18/x36 Interleaved Pipeline mode
? Byte Write (BW) and/or Global Write (GW) operation
? Internal self-timed write cycle
? Automatic power-down for portable applications
? JEDEC-standard 119-bump BGA package
? RoHS-compliant 119-bump BGA package available
產(chǎn)品屬性
- 型號(hào)：
GS816218BGB-250IV
- 制造商：
GSI Technology
- 功能描述：
SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 5.5NS/3NS 119FBGA - Trays
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
GSI Technology |
2022+ |
原廠(chǎng)原包裝 |
8600 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢(xún)價(jià) |
