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GS82612DT19CE-250MQ中文資料GSI數(shù)據(jù)手冊PDF規(guī)格書

GS82612DT19CE-250MQ
廠商型號

GS82612DT19CE-250MQ

功能描述

288Mb/144Mb/72Mb Burst of 4 SigmaQuad-IITM

文件大小

2.03569 Mbytes

頁面數(shù)量

43

生產(chǎn)廠商 GSI Technology
企業(yè)簡稱

GSI

中文名稱

GSI Technology官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-5 20:00:00

GS82612DT19CE-250MQ規(guī)格書詳情

Features

? Aerospace-Level Product

? 2.0 clock Latency with DLL on

? 1.0 clock Latency with DLL off

? Optional DLL-controlled output timing

? Can be operated with DLL on or off

? Simultaneous Read and Write SigmaQuad? Interface

? JEDEC-standard pinout and package

? Dual Double Data Rate interface

? Byte Write controls sampled at data-in time

? Burst of 4 Read and Write

? Dual-Range On-Die Termination (ODT) on Data (D), Byte

Write (BW), and Clock (K, K) inputs

? 1.8 V +100/–100 mV core power supply

? 1.5 V or 1.8 V HSTL Interface

? Pipelined read operation

? Fully coherent read and write pipelines

? ZQ pin for programmable output drive strength

? Data Valid Pin (QVLD) Support

? IEEE 1149.1 JTAG-compliant Boundary Scan

? 165-bump Ceramic Column Grid Array (CCGA) and

165-bump Land Grid Array (LGA) packages

Radiation Performance

? Total Ionizing Dose (TID) > 100krads(Si)

? Single Event Latchup Immunity > 77.3 MeV.cm2

/mg (125?C)

SigmaQuad? Family Overview

The GS82612DT19/37, GS81332DT19/37, and

GS8692DT19/37 are built in compliance with the SigmaQuadII+ SRAM pinout standard for Separate I/O synchronous

SRAMs. They are 301,989,888-bit (288Mb), 150,994,944-bit

(144Mb), and 75,497,472-bit (72Mb) SRAMs. These

SigmaQuad SRAMs are just one element in a family of low

power, low voltage HSTL I/O SRAMs designed to operate at

the speeds needed to implement economical high performance

networking systems.

Clocking and Addressing Schemes

The Rad-Hard SigmaQuad-II+ SRAMs are synchronous

devices. They employ two input register clock inputs, K and K.

K and K are independent single-ended clock inputs, not

differential inputs to a single differential clock input buffer.

Each internal read and write operation in a SigmaQuad-II+ B4

RAM is four times wider than the device I/O bus. An input

data bus de-multiplexer is used to accumulate incoming data

before it is simultaneously written to the memory array. An

output data multiplexer is used to capture the data produced

from a single memory array read and then route it to the

appropriate output drivers as needed. Therefore, the address

field of a SigmaQuad-II+ B4 RAM is always two address pins

less than the advertised index depth (e.g., the 16M x 18 has a

4M addressable index).

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