GS840E18AB-100I中文資料GSI數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

Applications

The GS840E18/32/36A is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2- bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36A is available in a JEDEC standard 100-lead TQFP or 119-Bump BGA package.

Features

? FT pin for user-configurable flow through or pipelined operation

? Dual Cycle Deselect (DCD) operation

? 3.3 V +10/–5 core power supply

? 2.5 V or 3.3 V I/O supply

? LBO pin for Linear or Interleaved Burst mode

? Internal input resistors on mode pins allow floating mode pins

? Default to Interleaved Pipelined mode

? Byte Write (BW) and/or Global Write (GW) operation

? Common data inputs and data outputs

? Clock control, registered, address, data, and control

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC standard 100-lead TQFP or 119-Bump BGA package

? Pb-Free 100-lead TQFP package available