GTRA374902FC中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

? GaN on SiC HEMT technology

? Input matched

? Asymmetrical Doherty design

- Main: P3dB = 220 W Typ

- Peak: P3dB = 300 W Typ

? Typical Pulsed CW performance, 3700 MHz, 48 V,

Doherty @ P3dB, 10 μs, 10 duty cycle

- Output power = 450 W

- Drain efficiency = 60

- Gain = 11.5 dB

? Capable of handling 10:1 VSWR @ 48 V, 63 W

(WCDMA) output power

? Human Body Model Class 1A, (per ANSI/ESDA/

JEDEC JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant