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H05N60中文資料華昕數(shù)據(jù)手冊PDF規(guī)格書

H05N60
廠商型號

H05N60

功能描述

N-Channel Power Field Effect Transistor

文件大小

60.77 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Hi-Sincerity Mocroelectronics
企業(yè)簡稱

HSMC華昕

中文名稱

華昕科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-12-24 12:20:00

H05N60規(guī)格書詳情

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Features

? Higher Current Rating

? Lower RDS(on)

? Lower Capacitances

? Lower Total Gate Charge

? Tighter VSD Specifications

? Avalanche Energy Specified

產(chǎn)品屬性

  • 型號:

    H05N60

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    N-Channel Power Field Effect Transistor

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