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H05N60

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60E

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60F

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

MCU05N60

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU05N60A

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU05N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtecti

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtection

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMG05N60D

InsulatedGateBipolarTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMG05N60D

POWERLUXIGBT

ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtectionZenerDiode ?IndustryStandardPackage(SOT223) ?HighSpeedEoff:Typic

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號:

    H05N60

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    N-Channel Power Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
HSMC
23+
NA
586
專做原裝正品,假一罰百!
詢價
華晰
21+
TO-220F
70
原裝現(xiàn)貨假一賠十
詢價
H
23+
TO-220
10000
公司只做原裝正品
詢價
TOSHIBA/東芝
22+
TO-220F
6000
十年配單,只做原裝
詢價
華晰
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
TOSHIBA/東芝
23+
TO-220F
6000
原裝正品,支持實單
詢價
H
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
HJ/華昕
23+24
TO-220F
16790
專業(yè)經(jīng)營各種場效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
詢價
H
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
ANAM
24+
DIP48
9
詢價
更多H05N60供應(yīng)商 更新時間2025-2-1 17:00:00