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H05N60

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60E

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60F

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

MCU05N60

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU05N60A

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU05N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtecti

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtection

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMG05N60D

InsulatedGateBipolarTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMG05N60D

POWERLUXIGBT

ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtectionZenerDiode ?IndustryStandardPackage(SOT223) ?HighSpeedEoff:Typic

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SSD05N60J

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    H05N60

  • 制造商：

    HSMC

  • 制造商全稱(chēng)：

    HSMC

  • 功能描述：

    N-Channel Power Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HSMC
23+
NA
586
專(zhuān)做原裝正品,假一罰百!
 詢價(jià)
華晰
21+
TO-220F
70
原裝現(xiàn)貨假一賠十
 詢價(jià)
H
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
TOSHIBA/東芝
22+
TO-220F
6000
十年配單,只做原裝
 詢價(jià)
華晰
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
TOSHIBA/東芝
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢價(jià)
H
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢價(jià)
HJ/華昕
23+24
TO-220F
16790
專(zhuān)業(yè)經(jīng)營(yíng)各種場(chǎng)效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
 詢價(jià)
H
24+
TO-TO-220
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
ANAM
24+
DIP48
9
詢價(jià)
更多H05N60供應(yīng)商 更新時(shí)間2024-12-23 17:00:00

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