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H05N60E

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

05N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

BIDD05N60T

BIDD05N60TInsulatedGateBipolarTransistor(IGBT)

Features 600V,5A,LowVCE(sat) Trench-GateField-Stoptechnology Optimizedforconduction Robust RoHScompliant* Applications Switch-ModePowerSupplies(SMPS) UninterruptiblePowerSources(UPS) PowerFactorCorrection(PFC)

BournsBourns Electronic Solutions

伯恩斯

CJD05N60B

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJD05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJP05N60

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF05N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF05N60B

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60

N-CHANNELPOWERMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJU05N60B

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60B

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

DMS05N60

N-ChannelDepletion-ModeMOSFET

BWTECH

Bruckewell Technology LTD

FMC05N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMC05N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMI05N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMP05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

詳細參數(shù)

  • 型號：

    H05N60E

  • 制造商：

    HSMC

  • 制造商全稱：

    HSMC

  • 功能描述：

    N-Channel Power Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
HSMC
23+
NA
586
專做原裝正品,假一罰百!
 詢價
H
23+
TO-220
10000
公司只做原裝正品
 詢價
H
22+
TO-220
6000
十年配單,只做原裝
 詢價
H
23+
TO-220
6000
原裝正品，支持實單
 詢價
H
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
H
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
華晰
21+
TO-220F
70
原裝現(xiàn)貨假一賠十
 詢價
華晰
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
HJ/華昕
23+24
TO-220F
16790
專業(yè)經(jīng)營各種場效應管、三極管、IGBT、可控硅、穩(wěn)壓IC
 詢價
ANAM
24+
DIP48
9
詢價
更多H05N60E供應商 更新時間2024-12-24 17:00:00

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