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BIDD05N60T

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)

Features 600V,5A,LowVCE(sat) Trench-GateField-Stoptechnology Optimizedforconduction Robust RoHScompliant* Applications Switch-ModePowerSupplies(SMPS) UninterruptiblePowerSources(UPS) PowerFactorCorrection(PFC)

BournsBourns Electronic Solutions

伯恩斯

CJD05N60B

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJD05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJP05N60

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF05N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF05N60B

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60

N-CHANNELPOWERMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJU05N60B

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60B

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

DMS05N60

N-ChannelDepletion-ModeMOSFET

BWTECH

Bruckewell Technology LTD

FMC05N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMC05N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMI05N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMP05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMV05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati

FujiFuji Electric

富士電機富士電機株式會社

H05N60

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

供應商型號品牌批號封裝庫存備注價格
Bourns Inc.
24+
TO-252-3 DPak(2 引線 + 接片
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
BOURNS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
FOA
1535+
726
詢價
FORMERICA OPTOELECTRONICS
2023+
SMD
826
安羅世紀電子只做原裝正品貨
 詢價
FOA
23+
726
全新原裝，歡迎來電咨詢
 詢價
Unknown
23+
NA
259
專做原裝正品,假一罰百!
 詢價
AELTA
23+
6959
1048
全新原裝現(xiàn)貨
 詢價
原裝
1922+
NA
3000
絕對進口原裝現(xiàn)貨
 詢價
N/A
23+
原廠封裝
5177
現(xiàn)貨
 詢價
FRAMEPLUG-INRIGHTSIDEINU
24+
1569
詢價
更多BIDD05N60T供應商 更新時間2024-12-23 10:49:00

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