零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FMI05N60E | N-CHANNEL SILICON POWER MOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | |
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtecti | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtection | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
POWERLUXIGBT ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtectionZenerDiode ?IndustryStandardPackage(SOT223) ?HighSpeedEoff:Typic | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
詳細(xì)參數(shù)
- 型號:
FMI05N60E
- 制造商:
FUJI
- 制造商全稱:
Fuji Electric
- 功能描述:
N-CHANNEL SILICON POWER MOSFET
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
F |
23+ |
T-PACK(L) |
10000 |
公司只做原裝正品 |
詢價 | ||
F |
22+ |
T-PACK(L) |
6000 |
十年配單,只做原裝 |
詢價 | ||
FUJI |
原廠封裝 |
1000 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
F |
22+ |
T-PACK(L) |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
FUJI/富士電機 |
23+ |
N/A |
11550 |
FUJI/富士電機系列在售 |
詢價 | ||
FUJI/富士電機 |
23+ |
N/A |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 | ||
FUJI/富士電機 |
23+ |
TO262 |
28888 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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