零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
H07N60E | N-Channel Power Field Effect Transistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | |
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.7? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤700m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600VSiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
600VSiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
600VSuperJunctionPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CR | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.7? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerTransistor
| InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤700m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
詳細(xì)參數(shù)
- 型號:
H07N60E
- 制造商:
HSMC
- 制造商全稱:
HSMC
- 功能描述:
N-Channel Power Field Effect Transistor
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
H |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
華晰 |
23+ |
TO0-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
華晰 |
2022 |
TO0-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
華晰 |
23+ |
NA/ |
850 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
HSMC |
23+ |
17+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
HSMC |
23+ |
17+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
H |
24+ |
TO- |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
華昕 |
24+ |
TO-220F |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
HJ/華昕 |
1822+ |
TO-220F |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
H |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) |
相關(guān)規(guī)格書
更多- H07N60F
- H07NND3H2U3G100
- H07NRD3H2U3G100
- H07NTD3H2U3G100
- H07NVD3H2U3G100
- H08A10PT
- H08A15
- H08A15PT
- H08A20
- H08A20PT
- H08A30
- H08A40
- H08A50
- H08A60
- H08C
- H-09-010-BK
- H0911
- H099E31
- H0D088-344TGSC-Y
- H0F1225L12HHBB
- H0PPH-1006G
- H0PPH-1018G
- H0PPH-1036G
- H0PPH-1406G
- H0PPH-1418G
- H-1
- H1 BP130W
- H1 BP70W/24V
- H1,5/14
- H1.5/14D BLACK BD
- H1.5X2LG6
- H-10
- H100
- H100 1/2
- H100 KP9 WAF
- H10004304
- H100056
- H100058
- H-1000A
- H1000D1B50WL
- H-1000L
- H100136F
- H1001S1NL
- H-1002
- H100-24S12
相關(guān)庫存
更多- H07N65
- H07NND3HU3G100
- H07NRD3HU3G100
- H07NTD3HU3G100
- H07NVD3HU3G100
- H08A15
- H08A15PT
- H08A20
- H08A20PT
- H08A30
- H08A30PT
- H08A40PT
- H08A50PT
- H08A60PT
- H08N02CTS
- H090E31
- H09480062CPCD8
- H0A327200064
- H0D720400003
- H0H400400007
- H0PPH-1006M
- H0PPH-1018M
- H0PPH-1036M
- H0PPH-1406M
- H0PPH-1418M
- H1-
- H1 BP55W
- H1,0/14
- H1.0/14D RED BD
- H1.5X2BL6
- H10
- H10/14
- H-100
- H100 3/8
- H-1000
- H100054
- H100057
- H10007-08
- H1000C1
- H-1000-F2-380
- H1001
- H1001M1
- H-1002
- H100-24S12
- H100-24S15