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SPA07N60CFD

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CR

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N60CFD

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

07N60CFD

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CJP07N60

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP07N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJPF07N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJPF07N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CMT07N60

POWERFIELDEFFECTTRANSISTOR

[ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc

ETCList of Unclassifed Manufacturers

未分類制造商

FSA07N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FTA07N60C

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H07N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H07N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H07N60F

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

ISPP07N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.7? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISPW07N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤700m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MH07N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MHF07N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MJU07N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

SPP07N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N60CFD

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPA07N60CFD

  • 功能描述：

    MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon
17+
TO-220F
6200
詢價(jià)
INFINEO
2020+
TO-220
400
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
INFINEON
1816+
TO-220F
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
INFINEON
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
INFINEON
20+
TO-220F
38900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
INFINEON
24+
TO-220F
36500
原裝現(xiàn)貨/放心購(gòu)買
 詢價(jià)
INFINEON/英飛凌
22+
TO-220F
20000
保證原裝正品,假一陪十
 詢價(jià)
INFINEON/英飛凌
2021+
TO-220
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
INFINEON/英飛凌
21+
TO-220
7018
原裝現(xiàn)貨假一賠十
 詢價(jià)
INFINEON/英飛凌
23+
PG-TO220-3
28523
公司只做原裝正品
 詢價(jià)
更多SPA07N60CFD供應(yīng)商 更新時(shí)間2025-1-11 8:30:00

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