首頁 >H7N1004DL-E>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
H7N1004DL-E | Silicon N-Channel MOSFET High-Speed Power Switching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
SiliconNChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigH-SpeedPowerSwitching Features Lowon-resistance RDS(on)=25m?typ. Lowdrivecurrent Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigH-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
PowerMOSFETsandIGBTforPDP
| RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào):
H7N1004DL-E
- 制造商:
Renesas Electronics Corporation
- 制造商:
Renesas Electronics Corporation
- 功能描述:
Trans MOSFET N-CH 100V 25A 3-Pin(3+Tab) DPAK(L)-(2) Sack
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
RENESAS |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
Renesas |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
瑞薩Renesa |
18+ |
TO252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
RENESAS |
20+ |
TO-252 |
63258 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO220-2 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
RENESAS/瑞薩 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
RENESAS |
21+ |
TO-251 |
100 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
VBsemi |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
R |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
RENESAS |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
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