首頁 >H7N1004DS-E>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SiliconNChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigH-SpeedPowerSwitching Features Lowon-resistance RDS(on)=25m?typ. Lowdrivecurrent Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigH-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
PowerMOSFETsandIGBTforPDP
| RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconN-ChannelMOSFETHigh-SpeedPowerSwitching Features ?Lowon-resistance ?RDS(on)=25m?typ. ?Lowdrivecurrent ?Availablefor4.5Vgatedrive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào):
H7N1004DS-E
- 制造商:
Renesas Electronics Corporation
- 功能描述:
Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
RENESAS |
2023+ |
null |
8156 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
RENESAS |
2023+ |
null |
8156 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
RENESAS |
23+ |
null |
7000 |
詢價(jià) | |||
RENESAS/瑞薩 |
24+23+ |
TO-252 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
TO-252 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
RENESAS/瑞薩 |
新年份 |
TO-252 |
33288 |
原裝正品現(xiàn)貨,實(shí)單帶TP來談! |
詢價(jià) | ||
VBsemi/臺(tái)灣微碧 |
21+ |
TO-252 |
3026 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
VBsemi/臺(tái)灣微碧 |
22+ |
TO-252 |
32350 |
原裝正品 假一罰十 公司現(xiàn)貨 |
詢價(jià) | ||
R |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) |
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