| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
H9014 | NPN SILICON TRANSISTOR PRE-AMPLIFIER，LOWLEVEL&LOWNOISE | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | |
GENERALPURPOSETRANSISTOR | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHE9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features ?HighTotalPowerDissipation(PD:450mW) ?ComplementarytoHE9015 ?HighhFEandGoodLinearity | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHMBT9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features ?HighTotalPowerDissipation(PD:225mW) ?ComplementarytoHMBT9015 ?HighhFEandGoodLinearity | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications????????? NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications | SEMTECH Semtech Corporation | SEMTECH | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.1A)
| IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?POWERMOSFET
| IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.8A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
RepetitiveAvalancheRated Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpick-andplaceaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
-60VP-ChannelMOSFET Description TheSOT-223packageisdesignedforsurface-mounting usingvaporphase,infrared,orwavesolderingtechniques. Itsuniquepackagedesignallowsforeasyautomaticpickand- placeaswithotherSOTorSOPpackagesbuthasthe addedadvantageofimprovedthermalperformancedueto | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFET?PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
- 封裝形式：
- 極限工作電壓：
50V
- 最大電流允許值：
0.1A
- 最大工作頻率：
150MHZ
- 引腳數(shù)：
- 可代換的型號：
- 最大耗散功率：
0.45W
- 放大倍數(shù)：
- 圖片代號：
NO
- vtest：
50
- htest：
150000000
- atest：
0.1
- wtest：
0.45
詳細參數(shù)
- 型號：
H9014
- 制造商：
HUASHAN
- 制造商全稱：
HUASHAN
- 功能描述：
NPN SILICON TRANSISTOR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
16+ |
BGA |
2500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | |||
J6H9014C |
SOT23 |
3000 |
全新原裝現(xiàn)貨 樣品可售 |
詢價 | |||
HUASHAN/華汕 |
23+ |
TO-92 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
HIT |
TO-92 |
8553 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
RENESAS/瑞薩 |
24+ |
NA |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
HITACHI |
24+ |
TO-92 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
HITACHI/日立 |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
HITACHI |
TO-92 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
HITACHI/日立 |
24+23+ |
TO-92 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價 | ||
HITACHI/日立 |
23+ |
NA/ |
8250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 |
