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HA1002

1.1 - 1.7 GHz Low Noise Amplifier

HBH

HBH Microwave GmbH

HAF1002

SiliconPChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF1002

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1002L

SiliconPChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF1002L

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1002S

SiliconPChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF1002S

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAL1002

ProgrammerBoard

MICRONAS

Micronas

HAL1002

HighlyPreciseProgrammableHall-EffectSwitch

Introduction TheHallprogrammerboardV5.1isageneral-purposeprogramminginterfacewhichiscapableofaddressingtheprogrammableMicronasHall-effectsensorfamiliesHAL8xyandHAL100x. TheHallprogrammerboardV5.1isfullysoftwarecompatibletotheHallprogrammerboardV4.1.Henc

MICRONAS

Micronas

HBO1002W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HBO1002W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HCC1002

Hi-ReliabilityRADCapableOptoisolator

TTELECTT Electronics.

TT電子公司梯梯電子集成制造服務(wù)(蘇州)有限公司

HCM-1002-H

HIGHVOLTAGEIGBTMODULETARGETSPECIFICATION

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

HER1002

HIGHEFFICIENCYRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-1.0Ampere Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●1.0ampereoperationatTA=55withnothermalrunway ●Lowcost ●Ultrafastrecoverytimeforhighefficiency ●Lowforwardvoltage

Good-Ark

GOOD-ARK Electronics

HER1002

1AAxialHighEfficiencyRectifier

Voltagerange50to1000Volts PopularDO204AL/DO-41axialpackage PRODUCTSUMMARY FEATURES PlasticpackagehasUnderwritersLaboratoriesFlammabilityClassification94V-0 Highcurrentcapability Diffusedjunction Ultrafastswitchingforhighefficiency Hightemperatur

SSC

Silicon Standard Corp.

HER1002A

10AmpereHeatSinkDualCommonCathodeHighEfficiencyRectifiers

Features ◆Fastswitchingforhighefficiency ◆Lowforwardvoltagedrop ◆Highcurrentcapability ◆Lowreverseleakagecurrent ◆Highsurgecurrentcapability Application ◆AutomotiveInvertersandSolarInverters ◆PlatingPowerSupply,SMPSandUPS ◆CarAudioAmplifiersandSoundDevi

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

HER1002C

10AmpereHeatSinkDualCommonCathodeHighEfficiencyRectifiers

Features ◆Fastswitchingforhighefficiency ◆Lowforwardvoltagedrop ◆Highcurrentcapability ◆Lowreverseleakagecurrent ◆Highsurgecurrentcapability Application ◆AutomotiveInvertersandSolarInverters ◆PlatingPowerSupply,SMPSandUPS ◆CarAudioAmplifiersandSoundDe

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

HER1002CA

10.0AmpereHeatsinkDualCommonAnodeHighEfficiencyRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

HER1002CL

10.0AmpereHeatsinkDualSeriesConnectionHighEfficiencyRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

HER1002CR

10.0AmpereHeatsinkDualDoublerPolarityHighEfficiencyRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號:

    HA1002

  • 制造商:

    HBH

  • 制造商全稱:

    HBH

  • 功能描述:

    1.1 - 1.7 GHz Low Noise Amplifier

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QH MICRO-E(乾鴻微)
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6000
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TOKYO SEIMITSU
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EMPRO
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con
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現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index
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FAIRCHILD/仙童
23+
36530
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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FSC
22+
NA
27003
全新原裝正品現(xiàn)貨
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MICROCHIP
2023+
SSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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MICROCHIP
23+
SSOP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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MICROCHIP
23+
SSOP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
更多HA1002供應(yīng)商 更新時間2024-10-24 15:48:00