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HAF1009

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1009L

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1009S

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1009_15

Silicon P Channel MOS FET Series Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009C

1.0WATTUNREGULATED,SIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

IPT-1009

ICReferenceDesignTransformers

ICE

ice Components, Ins.

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

ISF1009

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage :VDSS=60V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISLT1009

SwitchingModePowerSupply

ISOCOM

ISOCOM COMPONENTS

ISYE-1009RH/PROTO

RadiationHardened2.5VReference

Intersil

Intersil Corporation

ISYE-1009RH/PROTO

RadiationHardened2.5VReference

Intersil

Intersil Corporation

ISYE-1009RH-Q

RadiationHardened2.5VReference

Intersil

Intersil Corporation

KAS1009

AC-DCPOWERMODULE10WSINGLEOUTPUT

CHINFA

Chinfa Electronics Ind. Co., Ltd.

KSC1009

NPN(HIGHVOLTAGEAMPLIFIER)

HIGHVOLTAGEAMPLIFIER ?HighCollector-BaseVoltageVCBO=160V ?CollectorCurrentIC=700mA ?CollectorPowerDissipationPC=800mW ?ComplementtoKSA709

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KSC1009

HighVoltageAmplifier

HighVoltageAmplifier ?HighCollector-BaseVoltage:VCBO=160V ?CollectorCurrent:IC=700mA ?CollectorPowerDissipation:PC=800mW ?ComplementtoKSA709 ?Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC1009CYBU

HighVoltageAmplifier

HighVoltageAmplifier ?HighCollector-BaseVoltage:VCBO=160V ?CollectorCurrent:IC=700mA ?CollectorPowerDissipation:PC=800mW ?ComplementtoKSA709 ?Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC1009CYTA

HighVoltageAmplifier

HighVoltageAmplifier ?HighCollector-BaseVoltage:VCBO=160V ?CollectorCurrent:IC=700mA ?CollectorPowerDissipation:PC=800mW ?ComplementtoKSA709 ?Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HAF1009

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon P Channel MOS FET Series Power Switching

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS
2020+
TO263
1976
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
RENESAS
23+
SOT263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
RENESAS
22+23+
TO263
11237
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
22+
TO263
23687
原裝正品現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
1948+
TO263
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
RENESAS
2020+
TO263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
RENESAS
2023+
TO263
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
RENESAS
24+
TO263
65200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
RENESAS/瑞薩
21+
TO-263
23000
只做正品原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價(jià)
更多HAF1009供應(yīng)商 更新時(shí)間2025-1-11 13:57:00

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