零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFETS FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFETS FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancher | IRF International Rectifier | IRF | ||
Repetitiveavalancherated DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-4.3A) ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細參數(shù)
- 型號:
HB9630H
- 制造商:
Pentair Technical Products/Hoffman
- 功能描述:
SHAFT & HANDLE, IP65 Black, 3.46x9.65x2.43, Plastic
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AD |
2339+ |
SSOP-8P |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
23+ |
65480 |
詢價 | |||||
FAIRCHILD/仙童 |
23+ |
TO-220 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
N/A |
2023+環(huán)?,F(xiàn)貨 |
標準封裝 |
2500 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價 | ||
FAIRCHILD |
23+ |
TO263 |
4500 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
FAIRCHILD |
SOT263 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
FAIRCHILD/仙童 |
22+ |
SOT263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
SOT263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
FAIRCHIL |
2023+ |
TO-263 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
TE Connectivity |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
相關(guān)規(guī)格書
更多- HB9630J
- HB9630S2
- HB9630S4
- HBA100MFZRE
- HBA114TN6R
- HBA114YS6R
- HBA143ES6R
- HBA143ZS6R
- HBA15MFZRE
- HBA-2030
- HBA33MFZRE
- HBA48T12280-NCAPG
- HBA48T12280-NCBPG
- HBA48T12280-PCAPG
- HBA9C4M_12
- HBAA40W-A+
- HBAA-40-W-AG
- HBAS16
- HBAT54_08
- HBAT-5400-BLK
- HBAT-5400-TR1
- HBAT-5400-TR2
- HBAT-5402
- HBAT-5402-BLKG
- HBAT-5402-TR1G
- HBAT-5402-TR2G
- HBAT-540B-BLK
- HBAT-540B-TR1
- HBAT-540B-TR2
- HBAT-540C
- HBAT-540C-BLKG
- HBAT-540C-TR1G
- HBAT-540C-TR2G
- HBAT-540E-BLK
- HBAT-540E-TR2
- HBAT-540F-BLK
- HBAT-540F-TR2
- HBAT54C
- HBAT54X
- HBAV99
- HBAW56
- HBB 24
- HBB/BK
- HBB15-1.5-A+
- HBB15-1.5AG
相關(guān)庫存
更多- HB9630S
- HB9630S3
- HBA100
- HBA114ES6R
- HBA114TS6R
- HBA124XS6R
- HBA143TS6R
- HBA144ES6R
- HBA180
- HBA22MFZRE
- HBA47MFZRE
- HBA48T12280-NCAQG
- HBA48T12280-NCBQG
- HBA9C4M
- HBAA-40W-A
- HBAA40W-A+G
- HBAA-40W-AG
- HBAT54
- HBAT-5400
- HBAT-5400-BLKG
- HBAT-5400-TR1G
- HBAT-5400-TR2G
- HBAT-5402-BLK
- HBAT-5402-TR1
- HBAT-5402-TR2
- HBAT-540B
- HBAT-540B-BLKG
- HBAT-540B-TR1G
- HBAT-540B-TR2G
- HBAT-540C-BLK
- HBAT-540C-TR1
- HBAT-540C-TR2
- HBAT-540E
- HBAT-540E-TR1
- HBAT-540F
- HBAT-540F-TR1
- HBAT54A
- HBAT54S
- HBAV70
- HBAW1015
- HBB 18
- HBB 30
- HBB15-1.5-A
- HBB15-1.5-A+G
- HBB15-1.5-AG