零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
25Aand28A,80Vand100V,0.077and0.100Ohm,N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
iscN-ChannelMosfetTransistor DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack | FS First Silicon Co., Ltd | FS | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
N-ChannelMOSFETusesadvancedtrenchtechnology Description: ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features: 1)VDS=100V,ID=30A,RDS(ON)≤70m?@VGS=10V 2)Lowgatecharge. 3)Greendeviceavailable. 4)Advancedhig | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TO-220-3LPlastic-EncapsulateMOSFETS FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead(Pb)-freeAvailable | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
N-ChannelPowerMOSFET DESCRIPTION ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=77mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedespeciallyforhi | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
GOOD-ARK |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
JST/日壓 |
2508+ |
/ |
470984 |
一級(jí)代理,原裝現(xiàn)貨 |
詢價(jià) | ||
HVCA |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
MDD |
21+ |
DO-27 |
12588 |
原裝正品,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
HVCA |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
群鑫 |
22+ |
R-6/P600 |
30911 |
原裝正品,一級(jí)代理 |
詢價(jià) | ||
HYG |
2023+ |
R-6 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣(mài) |
詢價(jià) | ||
JX |
23+ |
DO-27 |
7600 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
JX |
23+ |
DO-27 |
7600 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
Micro Commercial Co |
25+ |
R-6 |
9350 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) |
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