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HGT1S5N120BNDS中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HGT1S5N120BNDS
廠商型號(hào)

HGT1S5N120BNDS

功能描述

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

文件大小

89.22 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-9 15:26:00

HGT1S5N120BNDS規(guī)格書(shū)詳情

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49306.

Features

? 21A, 1200V, TC = 25°C

? 1200V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

? Thermal Impedance SPICE Model

?? Temperature Compensating SABER? Model

?? www.intersil.com

? Related Literature

?? - TB334 “Guidelines for Soldering Surface Mount

????? Components to PC Boards”

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