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首頁>HGTD1N120BNS9A>詳情
HGTD1N120BNS 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 FAIRCHILD/仙童半導(dǎo)體
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號:
HGTD1N120BNS9A
- 制造商:
onsemi
- 類別:
- 包裝:
管件
- IGBT 類型:
NPT
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.9V @ 15V,1A
- 開關(guān)能量:
70μJ(開),90μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
15ns/67ns
- 測試條件:
960V,1A,82 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 供應(yīng)商器件封裝:
TO-252AA
- 描述:
IGBT 1200V 5.3A 60W TO252AA
供應(yīng)商
- 企業(yè):
深圳市永貝爾科技有限公司
- 商鋪:
- 聯(lián)系人:
徐瑪莉
- 手機(jī):
13378414494
- 詢價:
- 電話:
0755-82566736
- 傳真:
0755-83205962
- 地址:
深圳市福田區(qū)華強(qiáng)北路賽格廣場68樓6811A
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