訂購(gòu)數(shù)量 | 價(jià)格 |
---|---|
1+ |
HGTD1N120BNS 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 INTERSIL
- 詳細(xì)信息
- 規(guī)格書(shū)下載
產(chǎn)品參考屬性
- 類(lèi)型
描述
- 產(chǎn)品編號(hào):
HGTD1N120BNS9A
- 制造商:
onsemi
- 類(lèi)別:
- 包裝:
管件
- IGBT 類(lèi)型:
NPT
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.9V @ 15V,1A
- 開(kāi)關(guān)能量:
70μJ(開(kāi)),90μJ(關(guān))
- 輸入類(lèi)型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
15ns/67ns
- 測(cè)試條件:
960V,1A,82 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類(lèi)型:
表面貼裝型
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 供應(yīng)商器件封裝:
TO-252AA
- 描述:
IGBT 1200V 5.3A 60W TO252AA
供應(yīng)商
- 企業(yè):
深圳市星佑電子有限公司
- 商鋪:
- 聯(lián)系人:
李先生.張小姐
- 手機(jī):
13682592920/13713568066
- 詢(xún)價(jià):
- 電話:
0755-83997861/83993781
- 傳真:
0755-83997996
- 地址:
深圳市福田區(qū)深南中路3007號(hào)國(guó)際科技大廈2201
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