首頁>HGTG12N60D1D>規(guī)格書詳情
HGTG12N60D1D中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
HGTG12N60D1D規(guī)格書詳情
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features
? 12A, 600V
? Latch Free Operation
? Typical Fall Time <500ns
? Low Conduction Loss
? With Anti-Parallel Diode
? tRR
?
產(chǎn)品屬性
- 型號：
HGTG12N60D1D
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
Harris
- 功能描述：
Harris TO-247 NXC6A, NXF7D
- 制造商：
Harris Corporation
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Harris |
23+ |
NA |
864 |
專做原裝正品,假一罰百! |
詢價 | ||
HARRIS |
17+ |
TO-247 |
6200 |
詢價 | |||
FAIRCHILD/仙童 |
23+ |
TO-247 |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
24+ |
N/A |
65000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
INTERSIL |
23+ |
TO-252(DPAK) |
8400 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
N/A |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SYNCPOWE |
23+ |
SOP-8P |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
Intersil |
24+ |
TO-247 |
8866 |
詢價 | |||
FAIRCHILD |
23+ |
TO-247 |
9526 |
詢價 | |||
HAR |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價 |
