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HGTP1N120CN

6.2A, 1200V, NPT Series N-Channel IGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CND

6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

1N120

GOLDBONDEDDIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

ETCList of Unclassifed Manufacturers

未分類制造商

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD1N120BNS

TrenchField-StopTechnologyIGBT

DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTD1N120CNS

6.2A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BND

5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

IXTA1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTA1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTY1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTY1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

STP1N120

channel1200V-30廓-500mA-TO-220Zener-protectedSuperMESH??PowerMOSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

UG1N120

1200VNPTSERIESN-CHANNELIGBT

UTCUnisonic Technologies

友順友順科技股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
TO-220
9526
詢價
Intersil
24+
TO-220
8866
詢價
仙童/INTERSI
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
INTERSIL
23+
TO-220
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
2022+
TO-220
12888
原廠代理 終端免費提供樣品
 詢價
INTERSIL
23+
TO-220
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INTERSIL
23+
TO-220
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
FAIRCHILD/仙童
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
INTERSIL
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
FAIRCHILD
06+
原廠原裝
9870
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
更多HGTP1N120CN供應(yīng)商 更新時間2025-1-7 17:09:00

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