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HGTP3N60C3D中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書

HGTP3N60C3D
廠商型號

HGTP3N60C3D

功能描述

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件大小

327.17 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Harris Corporation
企業(yè)簡稱

HARRIS

中文名稱

Harris Corporation

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時(shí)間

2025-1-7 8:48:00

HGTP3N60C3D規(guī)格書詳情

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

Features

? 6A, 600V at TC = +25°C

? 600V Switching SOA Capability

? Typical Fall Time - 130ns at TJ = +150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode

產(chǎn)品屬性

  • 型號:

    HGTP3N60C3D

  • 功能描述:

    IGBT 晶體管

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
FAIRCHILD
2023+
SMD
1600
安羅世紀(jì)電子只做原裝正品貨
詢價(jià)
FAIRCHI
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
詢價(jià)
HARRIS
24+
35200
一級代理/放心采購
詢價(jià)
仙童/INTERSI
2023+
TO-220
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
仙童/INTERSI
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
FSC
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FAIRCHILD
23+
TO-220
9526
詢價(jià)
FAIRCHILD/仙童
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
Intersil
24+
TO-220
8866
詢價(jià)