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HGTP3N60C3D中文資料HARRIS數據手冊PDF規(guī)格書
HGTP3N60C3D規(guī)格書詳情
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.
Features
? 6A, 600V at TC = +25°C
? 600V Switching SOA Capability
? Typical Fall Time - 130ns at TJ = +150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
產品屬性
- 型號：
HGTP3N60C3D
- 功能描述：
IGBT 晶體管
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
Intersil |
24+ |
TO-220 |
8866 |
詢價 | |||
FAIRCHI |
21+ |
TO-220 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
HARRIS |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
HARRIS/哈里斯 |
23+ |
59680 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
專注配單,只做原裝進口現貨 |
詢價 | ||
HARRIS |
05+ |
原廠原裝 |
4295 |
只做全新原裝真實現貨供應 |
詢價 | ||
2020+ |
6500 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 | ||||
INF |
2020+ |
TO-220 |
350000 |
100%進口原裝正品公司現貨庫存 |
詢價 | ||
FAIRCHILD |
2023+ |
SMD |
1600 |
安羅世紀電子只做原裝正品貨 |
詢價 |
