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HM10N15D

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ME10N15

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTM10N15L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP10N15

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP10N15L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RFM10N15

N-ChannelEnhancement-ModePowerField-EffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFM10N15

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFM10N15

N-ChannelEnhancement-ModePowerField-EffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP10N15

N-ChannelEnhancement-ModePowerField-EffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP10N15

N-ChannelEnhancement-ModePowerField-EffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP10N15

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFP10N15

10A,150V,0.300Ohm,N-ChannelPowerMOSFETs

Features ●10A,120Vand150V ●rDS(on)=0.3Ω ●SOAisPower-DissipationLimited ●NanosecondSwitchingSpeeds ●LinearTransferCharacteristics ●HighInputImpedance ●MajorityCarrierDevice

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
H
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
H
TO-220
22+
6000
十年配單,只做原裝
 詢價(jià)
H
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
sino
2023+
TO-252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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HMSEMI
23+
TO-220
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
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HMSEMI
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
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H
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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HM
23+
TO-220TO-220F
129999
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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更多HM10N15D供應(yīng)商 更新時(shí)間2024-12-24 14:30:00

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