零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MTP10N15 | POWER FIELD EFFECT TRANSISTOR
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
10A,150V,0.3廓,N-CHANNELPOWERMOSFETS | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
DARLINGTONCOMPLEMENTARYPOWERTRANSISTORS APPLICATIONS ?Audio ?SeriesRegulator ?GeneralPurpose FEATURES ?Highcurrentcapability ?Highreliability ?RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
DARLINGTONCOMPLEMENTARYPOWERTRANSISTORS APPLICATIONS ?Audio ?SeriesRegulator ?GeneralPurpose FEATURES ?Highcurrentcapability ?Highreliability ?RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
10A,150V,0.300Ohm,N-ChannelPowerMOSFETs Features ●10A,120Vand150V ●rDS(on)=0.3Ω ●SOAisPower-DissipationLimited ●NanosecondSwitchingSpeeds ●LinearTransferCharacteristics ●HighInputImpedance ●MajorityCarrierDevice | Intersil Intersil Corporation | Intersil |
詳細(xì)參數(shù)
- 型號:
MTP10N15
- 制造商:
MOTOROLA
- 制造商全稱:
Motorola, Inc
- 功能描述:
POWER FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
24+ |
1100 |
詢價 | |||||
MOT |
06+ |
TO-220 |
3000 |
原裝庫存 |
詢價 | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ON |
24+ |
TO-220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
ON |
2020+ |
TO-220 |
35000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
MOTOROLA/摩托羅拉 |
21+ |
65200 |
詢價 | ||||
ON/安森美 |
23+ |
SOT23 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
O |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價 | ||
MOTOROLA |
22+ |
220 |
6000 |
十年配單,只做原裝 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
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