首頁 >BL10N15A-GE-B>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BL10N15A-GE-B | DARLINGTON COMPLEMENTARY POWER TRANSISTORS APPLICATIONS ?Audio ?SeriesRegulator ?GeneralPurpose FEATURES ?Highcurrentcapability ?Highreliability ?RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | |
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
POWERFIELDEFFECTTRANSISTOR
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
10A,150V,0.300Ohm,N-ChannelPowerMOSFETs Features ●10A,120Vand150V ●rDS(on)=0.3Ω ●SOAisPower-DissipationLimited ●NanosecondSwitchingSpeeds ●LinearTransferCharacteristics ●HighInputImpedance ●MajorityCarrierDevice | Intersil Intersil Corporation | Intersil |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
BELLING/上海貝嶺 |
24+ |
TO220 TO220F TO251 TO252 |
820000 |
全新原廠原裝正品支持實(shí)單 |
詢價(jià) | ||
貝嶺 |
23+ |
TO220 |
9900 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
BL |
21+ |
TO-220F |
50 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
BL |
19+ |
TO-220F |
50 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
BL |
23+ |
原裝正品現(xiàn)貨 |
10000 |
TO-220F |
詢價(jià) | ||
華微 |
23+ |
TO-247 |
50000 |
華微功率器件全系列供應(yīng),支持終端生產(chǎn) |
詢價(jià) | ||
華微 |
23+ |
TO-247 |
46000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) | ||
Apex |
1824+ |
NA |
16 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
BL |
18 |
NA |
200 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價(jià) | ||
TOS |
2339+ |
DIP |
13523 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) |
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