| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HM2505B | Single channel 3.0-15.0V peak 12.0A H-bridge driver chip | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | |
Singlechannel3.0-15.0Vpeak15.0AH-bridgedriverchip | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert | IXYS IXYS Corporation | IXYS | ||
N-ChannelPowerMOSFET DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | ||
50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
30A,200V,0.085Ohm,N-ChannelPowerMOSFET ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRds(on) ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvoltage) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRF International Rectifier | IRF |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BUSSMANN/巴斯曼 |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保 |
詢價 | ||
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
EATON(伊頓) |
23+ |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | |||
CarlingTechnologies |
新 |
172 |
全新原裝 貨期兩周 |
詢價 | |||
Carling Technologies |
2022+ |
168 |
全新原裝 貨期兩周 |
詢價 | |||
CARLING |
22+ |
SOT-0995&NBS |
6000 |
全新原裝品牌專營 |
詢價 | ||
FOXCONN |
21+ |
35200 |
一級代理/放心采購 |
詢價 | |||
HIT |
88+ |
CDIP16 |
2760 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | ||
HIT |
05+ |
原廠原裝 |
4322 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
HIT |
24+ |
CDIP16 |
2560 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 |
相關(guān)規(guī)格書
更多- HM2505C
- HM25060-1CR
- HM25060-1MW12
- HM25060-1MW14
- HM25060-1MW24
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- HM25060-2MW14
- HM25060-2MW24
- HM25060-3CR
- HM25060-3MW12
- HM25060-3MW14
- HM25060-3MW24
- HM2507
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- HM25100-2CR
- HM2511B
- HM2512A
- HM2512C
- HM2512H
- HM2514
- HM2515D
- HM2516
- HM251-78
- HM2518
- HM25200-1CR
- HM25200-3CR
- HM2520B
- HM2520E
- HM2526
- HM2530
- HM2530D
- HM2531
- HM2533
- HM254
- HM25400-2CR
- HM-254045-10-8A
- HM-254097-10-8A
- HM-254127-10-8A
- HM2550
- HM25600-1CR
- HM25600-3CR
- HM2570A
- HM2572
- HM25N03D
- HM25N06Q
相關(guān)庫存
更多- HM2506
- HM25060-1MW12
- HM25060-1MW14
- HM25060-1MW24
- HM25060-2CR
- HM25060-2MW12
- HM25060-2MW14
- HM25060-2MW24
- HM25060-3MW12
- HM25060-3MW14
- HM25060-3MW24
- HM2506MR
- HM250N03D
- HM25100-1CR
- HM25100-3CR
- HM2512
- HM2512B
- HM2512D
- HM2513
- HM2515
- HM2515E
- HM251-73
- HM2517B
- HM2520
- HM25200-2CR
- HM2520A
- HM2520C
- HM2521
- HM2527
- HM2530A
- HM2530E
- HM2532E
- HM2535
- HM25400-1CR
- HM25400-3CR
- HM-254064-10-8A
- HM2540C
- HM-254254-10-8A
- HM2553
- HM25600-2CR
- HM2570
- HM2570B
- HM2583
- HM25N03Q
- HM25N08D
