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HMS11N65

N-Channel Super Junction MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS11N65F

N-Channel Super Junction MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS11N65I

N-Channel Super Junction Power MOSFET ?

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS11N65K

N-Channel Super Junction Power MOSFET ?

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ICE11N65FP

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE11N65FP

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

KPS11N65D

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會社

KPS11N65F

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會社

MDF11N65B

N-ChannelMOSFET650V,12A,0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDF11N65B

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MDF11N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF11N65BTH

N-ChannelMOSFET650V,12A,0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDFS11N65B

N-ChannelMOSFET650V,12A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS11N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDFS11N65BTH

N-ChannelMOSFET650V,12A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

NCE11N65

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE11N65F

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

P11N65ZA

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PSM11N65CT

11A650VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N65CTF

11A650VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

供應(yīng)商型號品牌批號封裝庫存備注價格
HM
23+
TO263
28888
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2420+
/
178148
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TE Connectivity
2022+
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8600
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TE
24+
con
10000
查現(xiàn)貨到京北通宇商城
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24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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TE Connectivity(美國泰科)
23+
插件
7350
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TE Connectivity Aerospace, Def
23+
原廠封裝
436
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TEConnectivity
新
5
全新原裝 貨期兩周
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TE Connectivity
2022+
1
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OOMMINST
1736+
RELAY
8529
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更多HMS11N65供應(yīng)商 更新時間2024-12-24 14:48:00

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