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HRH25N50ANFT

500V N-Channel Planar MOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH25N50ANV

500VN-ChannelPlanarMOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH25N50ANW

500VN-ChannelPlanarMOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH25N50ANX

500VN-ChannelPlanarMOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

ISC25N50F

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTV25N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTV25N50E

TMOSPOWERFET25AMPERES500VOLTSRDS(on)=0.200OHM

TMOSE?FETPowerFieldEffectTransistorD3PAKforSurfaceMount N?ChannelEnhancement?ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

Motorola

Motorola, Inc

SIHA25N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHA25N50E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB25N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATONS ?Hards

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG25N50E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG25N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHP25N50E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP25N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATONS ?Hard

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP25N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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華瑞微
2023
TO-252
2580
原廠代理渠道,正品保障
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HR
23+
DIP
66800
現(xiàn)貨正品專供軍研究院
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HR
21+
DIP
645
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
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HR
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DIP
73
全新原裝 研究所指定供貨商
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NAIS
23+
RELAY
50000
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ALCATEL
24+
PLCC
400
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Eaton
22+
NA
168
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microray
24+
500000
行業(yè)低價(jià),代理渠道
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24+
N/A
72000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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LP
2021+
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16500
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