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KQB2N50

500VN-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KSMD2N50

500VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU2N50

500VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD2N50

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENT-MODESILICONGATEDPAKFORSURFACEMOUNTORINSERTIONMOUNT

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD2N50

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTD2N50E

N??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2N50E

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTD2N50E

TMOSPOWERFET2.0AMPERES500VOLTSRDS(on)=3.6OHM

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD2N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=2A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2N50ED

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2N50EI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2N50ELD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2N50ELI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM2N50

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM2N50

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N50

N-ChannelPowerMOSFETs,3.0A,450V/500V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP2N50

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MTP2N50

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP2N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTP2N50E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HRMICRO/華瑞微
24+
TO-252
5000
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更多HRH2N50BDD供應(yīng)商 更新時(shí)間2025-1-9 9:36:00

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