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ICS512MT

LOCO??PLLClockMultiplier

ICST

Integrated Circuit Systems

IDTVS512

WIDEBANDWIDTHVIDEOSIGNALSWITCH,5PORT

GeneralDescription TheIDTVS512isabi-directional5-Port2:1multiplexer/demultiplexerwithHi-ZoutputsforbothRGBandcompositevideoswitchingapplications.Withtheadditionaltwoports,verticalandhorizontalsynchronoussignalscanbeswitchedinadditiontoswitchingtheRGBandcomp

IDT

Integrated Device Technology, Inc.

IDTVS512QG

WIDEBANDWIDTHVIDEOSIGNALSWITCH,5PORT

GeneralDescription TheIDTVS512isabi-directional5-Port2:1multiplexer/demultiplexerwithHi-ZoutputsforbothRGBandcompositevideoswitchingapplications.Withtheadditionaltwoports,verticalandhorizontalsynchronoussignalscanbeswitchedinadditiontoswitchingtheRGBandcomp

IDT

Integrated Device Technology, Inc.

IDTVS512QGT

WIDEBANDWIDTHVIDEOSIGNALSWITCH,5PORT

GeneralDescription TheIDTVS512isabi-directional5-Port2:1multiplexer/demultiplexerwithHi-ZoutputsforbothRGBandcompositevideoswitchingapplications.Withtheadditionaltwoports,verticalandhorizontalsynchronoussignalscanbeswitchedinadditiontoswitchingtheRGBandcomp

IDT

Integrated Device Technology, Inc.

IFBF512

N-ChannelJFET

Features ?InterFETN0026Geometry ?LowNoise:3nV/√HzTypical ?LowCiss:5.0pFMaximum ?LowLeakage:10pATypical ?RoHSCompliant ?SMT,TH,andBareDiePackageoptions. Applications ?LowNoiseHighGain ?ReplacementforBF512andBF513 ?Mixers ?Oscillators ?VHFAmplifier

InterFET

InterFET Corporation

IPS512G

FULLYPROTECTEDHIGHSIDEPOWERMOSFETSWITCH

Description TheIPS511G/IPS512Garefullyprotectedfiveterminalhighsideswitcheswithbuiltinshort-circuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentiscontrolledwhenitreachesIlimvalue.Thecurrentlimitationisactivated

IRF

International Rectifier

IRF512

N-ChannelPowerMOSFETs,5.5A,60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF512

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

SUTEX

Supertex, Inc

IRF512

4.9A,and5.6A,80Vand100V,0.54and0.74Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

HARRIS

Harris Corporation

IRF512

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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Hirose
2020+
N/A
8
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Hirose
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NA
8
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HIROSE/廣瀨
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209858
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HRS(廣瀨)
24+
7350
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HIROSE
24+
con
35960
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HR
23+
TO-220
50000
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HR
15+
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112
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IR
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IR
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8000
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IR
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